Title of article :
An amorphous oxide semiconductor thin-film transistor route to oxide electronics
Author/Authors :
Wager، نويسنده , , John F. and Yeh، نويسنده , , Bao and Hoffman، نويسنده , , Randy L. and Keszler، نويسنده , , Douglas A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
9
From page :
53
To page :
61
Abstract :
Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications.
Keywords :
Amorphous oxide semiconductor (AOS) , Oxide electronics , Active-matrix liquid crystal display (AMLCD) , Indium gallium zinc oxide (IGZO) , flat-panel displays , Active-matrix organic light-emitting diode (AMOLED) , Thin-film transistor (TFT)
Journal title :
Current Opinion in Solid State and Materials Science
Serial Year :
2014
Journal title :
Current Opinion in Solid State and Materials Science
Record number :
2089385
Link To Document :
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