Title of article :
Near independence of OLED operating voltage on transport layer thickness
Author/Authors :
Swensen، نويسنده , , James S. and Wang، نويسنده , , Liang and Polikarpov، نويسنده , , Evgueni and Rainbolt، نويسنده , , James E. and Koech، نويسنده , , Phillip K. and Cosimbescu، نويسنده , , Lelia and Padmaperuma، نويسنده , , Asanga B.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2013
Pages :
4
From page :
29
To page :
32
Abstract :
We report organic light emitting devices (OLEDs) with weak drive voltage dependence on the thickness of the hole transport layer (HTL) for thicknesses up to 1150 Å using the N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (α-NPD) and N,N′-bis(3-methyl phenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′diamine (TPD), both of which have hole mobilities in the range of 2 × 10−3 cm2 V−1 s−1. Lower mobility HTL materials show larger operating voltage dependence on thickness. The near independence of the operating voltage for high mobility transport material thickness was only observed when the energy barrier for charge injection into the transport material was minimized. To ensure low injection barriers, a thin film of 2-(3-(adamantan-1-yl)propyl)-3,5,6-trifluorotetracyanoquinodimethane (F3TCNQ-Adl) was cast from solution onto the ITO surface. These results indicate that thick transport layers can be integrated into OLED stacks without the need for bulk conductivity doping, potentially reducing device and material complexity and lowering overall cost.
Keywords :
Conductivity doping , OLEDs , Blue OLEDs , Injection barriers , F3TCNQ-Adl
Journal title :
Synthetic Metals
Serial Year :
2013
Journal title :
Synthetic Metals
Record number :
2089596
Link To Document :
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