Title of article :
Effect of organic buffer layers on the performance of n-type organic field-effect transistor based on C60 active layer
Author/Authors :
Li، نويسنده , , Qing and Yu، نويسنده , , Xinge and Shi، نويسنده , , Wei and Yu، نويسنده , , Junsheng، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2013
Abstract :
The performance of n-type organic field-effect transistors (OFETs) based on C60 active layer was investigated by focusing on the role of 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene (TPBi), bathocuproine (BCP) and bathophenanthroline (Bphen) as buffer layers. It was found that the OFETs with the organic buffer layers exhibited significant improved electrical characteristics, such as saturation current, threshold voltage, field-effect mobility and current on/off ratio. Moreover, by optimizing the film thicknesses of these buffer layers, we also found that the buffer layers with appropriate film thickness can effectively improve charge carrier injection from Ag source/drain electrodes to C60 films. Also, the interface properties and the contact resistance between Ag source/drain electrodes and C60 films have been analyzed.
Keywords :
contact resistance , Organic field-effect transistors (OFETs) , Organic buffer layer , C60
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals