Author/Authors :
Li، نويسنده , , Xing-ao and Liu، نويسنده , , Zhong-ru and Wang، نويسنده , , Bo-lin and Yang، نويسنده , , Jianping and Ma، نويسنده , , Yan-wen and Feng، نويسنده , , Xiao-miao and Huang، نويسنده , , Wei and Gu، نويسنده , , Min-Fen Shen، نويسنده ,
Abstract :
Using ZnO film as catalytic substrate and template, honeycomb-like amorphous graphene film could be prepared from chemical vapor deposition of benzene at 700–800 °C. The special structure of the amorphous graphene film is inherited from the ZnO film since the film grown on Si wafer by radio frequency magnetron sputtering is composed of numerous ZnO nanocrystals. The topography of the as-prepared graphene film was well depicted by scanning electron microscopy and atomic force microscopy. The amorphous characteristic is clearly revealed by the combination of Raman spectrum, transmission electron microscopy and selected area electron diffraction. The possible growth process is also discussed.
Keywords :
RF magnetron sputtering , chemical vapor deposition , Amorphous graphene , Zinc oxide