Title of article :
Air stability of C60 based n-type OFETs
Author/Authors :
Ahmed، نويسنده , , Rizwan and Simbrunner، نويسنده , , Clemens and Schwabegger، نويسنده , , Günther and Baig، نويسنده , , M.A. and Sitter، نويسنده , , H.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2014
Pages :
4
From page :
136
To page :
139
Abstract :
Air stability of C60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with single layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices.
Keywords :
Single layer encapsulation , +  , BCB) , C60 , Air stability , n-Type OFETs , Bilayer encapsulation (parylene 
Journal title :
Synthetic Metals
Serial Year :
2014
Journal title :
Synthetic Metals
Record number :
2090594
Link To Document :
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