Title of article
Improving performance of selective-dewetting patterned organic transistors via semiconductor-dielectric blends
Author/Authors
Feng، نويسنده , , Xiang and Wang، نويسنده , , Ying and Lin، نويسنده , , Guangqing and Wang، نويسنده , , Xianghua and Wang، نويسنده , , Xiaohong H. Zhang، نويسنده , , Guobing and Lu، نويسنده , , Hongbo and Qiu، نويسنده , , Longzhen، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2014
Pages
6
From page
59
To page
64
Abstract
The fabrication of the self-patterned OTFTs based on a blend of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and poly(methyl methacrylate) (PMMA) were investigated. Structural analysis revealed a well-defined TIPS-pentacene-top/PMMA-bottom bilayer structure formed in the blend film. Because the PMMA underlayer acts as a modification layer at the semiconductor/dielectric interface, the blend OTFTs exhibited over 5 times higher mobility and significantly reduced hysteresis than pristine TIPS-pentacene device. This selective wetting/dewetting process based on polymer blends allows the formation of patterned films with a self-organized modification layer and has great potential for economical processing of large-area and high-performance electronic devices.
Keywords
Organic thin-film transistor , Polymer blends , patterning , Selective wetting
Journal title
Synthetic Metals
Serial Year
2014
Journal title
Synthetic Metals
Record number
2090903
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