Title of article :
Switching properties of V1 − xTixO2 thin films deposited from alkoxides
Author/Authors :
Hélène Tap-Béteille، نويسنده , , F. and Morineau، نويسنده , , R. and Livage، نويسنده , , J. and Nagano، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
9
From page :
1109
To page :
1117
Abstract :
TiO2-doped vanadium dioxide films have been deposited from vanadium oxo-alkoxide solutions. VO2 thin films of good optical quality are obtained after heating at 500 °C under a reducing atmosphere. These films exhibit highly reversible electrical and optical switching around 70 °C. A hysteresis phenomenon is observed, but V1 − xTixO2 films do not exhibit the same behavior as other doped VO2 films. The width of the hysteresis curve decreases as soon as Ti is added to the VO2 film. Best switching characteristics are obtained with Ti ≈ 5%. Evidence of the coexistence of two phases around the transition temperature is presented.
Keywords :
D. Optical properties , D. Electrical properties , B. sol-gel chemistry , A. Thin films , C. X-ray diffraction
Journal title :
Materials Research Bulletin
Serial Year :
1997
Journal title :
Materials Research Bulletin
Record number :
2093677
Link To Document :
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