Photoresponse of Tb3+ doped phosphosilicate thin films

Phosphosilicate ceramic was doped with Tb3+ using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiOx/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.