Electrical and Magnetic Characterization of Rh2O3-I

Electrical and magnetic measurement results show that Rh2O3-I is a p-type semiconductor showing temperature independent Pauli paramagnetism above 200 K. Below 200 K, this oxide shows an increase in the magnetic susceptibility with decreasing temperature, indicating a magnetic phase transition at 200 K. This transition is also reflected in the electrical resistivity measurements.