Title of article :
Estimation of Hole Conductivity in Ag-Doped Lead Iodide Film
Author/Authors :
Kuiry، نويسنده , , S.C. and Roy، نويسنده , , S.K. and Bose، نويسنده , , S.K، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
8
From page :
611
To page :
618
Abstract :
Hole conductivity values as a function of temperature and iodine pressure in compact and adherent PbI2 film grown on Ag-doped Pb have been estimated from the isothermal parabolic rate constants through a tarnishing study where Mott’s parabolic law of film growth is valid. Iodide films have been grown inside a specially designed iodination reactor in the temperature and iodine pressure ranges of 423–523 K and 0.615–6.578 kPa, respectively. Estimated hole conductivity values have been found to follow a pressure dependence relation of the type σh· = σh·0[p(I2)]1/2 with an associated activation energy value of 84 kJ·mol−1. The iodide film has been characterized by scanning electron microscopy and X-ray diffraction analyses.
Keywords :
C. Electron microscopy , C. X-ray diffraction , A. halides , A. Thin films , D. Electrical properties
Journal title :
Materials Research Bulletin
Serial Year :
1998
Journal title :
Materials Research Bulletin
Record number :
2093942
Link To Document :
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