Applications of BN- and ZnF2-containing zinc borate glasses to laser-annealed polycrystalline Si field effect transistors

The characteristics of MOS (metal oxide semiconductor) capacitors passivated by ZnF2- and BN-containing ZnO–B2O3–SiO2–Al2O3–P2O5 glasses with various contents of water were investigated. When the OH absorption coefficients in the glasses increased, there was an adverse effect on the recovery of shifts of the hysteresis C–V (capacitance and voltage) curves of the capacitance as a function of voltage. ZnF2 has an affinity for OH− ions, and the addition of BN progressively decreased OH− ions in ZnO–B2O3–SiO2–Al2O3–P2O5 glasses. It was found that MOS capacitors passivated with BN-containing glasses showed improvement in C–V curve shifts and hysteresis. The source-drain current and voltage (I–V) characteristics of both the typical enhancement and depletion mode field effect transistors passivated and rounded at 750°C by these glass membranes were confirmed.