Title of article :
Electrical properties of Na2US3,NaGdS2 and NaLaS2
Author/Authors :
Masuda، نويسنده , , Hidetoshi and Fujino، نويسنده , , Takeo and Sato، نويسنده , , Nobuaki and Yamada، نويسنده , , Kohta، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
10
From page :
1291
To page :
1300
Abstract :
The electrical properties of ternary mixed sulfides Na2US3, NaGdS2, and NaLaS2 were studied by measuring the electrical conductivity and Hall coefficient by the van der Pauw method in a temperature range of 17–300 K. These compounds have closely related crystal structures with nearly the same atom separations, but uranium is in a U4+ state in Na2US3 in contrast to Ln3+ ions in NaGdS2 and NaLaS2. The electrical conductivity was the highest for NaGdS2 (7.75 × 102 and 11.2 × 102 Sm−1 at 17 and 300 K, respectively) and the lowest for Na2US3 (0.98 × 102 and 1.14 × 102 Sm−1 at 17 and 300 K, respectively). They showed semiconductive behavior from the temperature dependence of the electrical conductivity. The Hall coefficient showed the dominant carriers to be electrons for NaGdS2 and holes for NaLaS2 and Na2US3. The carrier densities were not so apart in these compounds, i.e., 0.2–0.3 × 1025 m−3 for NaGdS2 and ∼0.1 × 1025 m−3 for Na2US3. The activation energies of conduction were very low for all three compounds, especially at low temperatures below 200 K.
Keywords :
C. X-ray diffraction , D. Crystal structure , A. Chalcogenides , D. Electrical properties , D. semiconductivity
Journal title :
Materials Research Bulletin
Serial Year :
1999
Journal title :
Materials Research Bulletin
Record number :
2094463
Link To Document :
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