Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure

Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800–1200°C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures of 4 and 8 kPa. The temperature at which the maximum growth rate occurs decreased with increasing total pressure. With increasing the substrate temperature and total pressure, the apparent grain size increased and the surface morphology showed a rough, cauliflower-like structure.