Title of article :
Deposition of CdS thin films by the successive ionic layer adsorption and reaction (SILAR) method
Author/Authors :
Sankapal، نويسنده , , B.R and Mane، نويسنده , , R.S. and Lokhande، نويسنده , , C.D، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
8
From page :
177
To page :
184
Abstract :
CdS thin films were prepared by the successive ionic layer adsorption and reaction (SILAR) method. The structural, optical, and electrical characterizations were carried out using X-ray diffraction, scanning electron microscopy, optical absorption, and electrical resistivity methods. The CdS films were annealed at various temperatures (373–673 K) in nitrogen atmosphere for 30 min and their structural, optical, and electrical properties are reported.
Keywords :
A. Semiconductors , A. Thin films , B. Chemical synthesis , C. Electron microscopy , C. X-ray diffraction
Journal title :
Materials Research Bulletin
Serial Year :
2000
Journal title :
Materials Research Bulletin
Record number :
2094723
Link To Document :
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