Author/Authors :
Rawat، نويسنده , , R.S and Arun، نويسنده , , P and Vedeshwar، نويسنده , , A.G and Lam، نويسنده , , Y.L. and Liu، نويسنده , , M.H. and Lee، نويسنده , , P and Lee، نويسنده , , S and Huan، نويسنده , , A.C.H، نويسنده ,
Abstract :
The effect of argon ion irradiation on vacuum-evaporated as-grown Sb2Te3 films in a dense plasma focused device (DPF) was studied by structural, compositional, and morphological analyses. The as-grown films consisted of both stoichiometric and nonstoichiometric Sb2Te3 phases with traces of Te. Ion energy greater than 1 MeV promoted the formation of nonstoichiometric SbxTe1−x phase and the oxidation of Sb. Ion energy less than 1 MeV promoted the formation of single stoichiometric Sb2Te3 phase and a homogeneous distribution of grain size with preferred orientation.
Keywords :
B. vapor deposition , C. X-ray diffraction , D. Microstructure , A. Chalcogenides , A. Thin films
