Preparation and characterization of As2S3 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method

Arsenic trisulfide (As2S3) thin films were deposited by a relatively new and simple successive ionic layer adsorption and reaction (SILAR) method using As2O3 and Na2S2O3 as arsenic and sulfide ion sources, respectively. The films were deposited on glass and silicon(111) wafer substrates. The concentration, pH, and temperature of anionic and cationic precursor solutions, immersion and rinsing times, and number of immersions have been optimized for obtaining good-quality As2S3 thin films. X-ray diffraction, optical absorption, and electrical resistivity techniques were used for characterization of the As2S3 thin films.