Title of article
Laser-induced energy gap transitions in lead iodide crystals
Author/Authors
Nayak، نويسنده , , A. S. BHALLA، نويسنده , , G.L. and Trigunayat، نويسنده , , G.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
11
From page
2263
To page
2273
Abstract
Single crystals of the common polytype 2H of lead iodide were grown by zone melting and subjected to argon ion laser irradiation. Both time and intensity of radiation were systematically varied to assess their effect on the magnitude of band gap of the crystals. The band gap was determined by UV spectrophotometry. When the beam intensity was varied, the band gap value steadily decreased from 2.53 to 2.02 eV, but the value drastically decreased from 2.53 to 1.04 eV when the irradiation time was varied. The results are explained in terms of changes in polycrystallinity, surface roughness, amount of absorption, and anisotropic nature of thermal conductivity of the material.
Keywords
A. halides , A. Semiconductors , B. Crystal growth , C. X-ray diffraction , D. Thermal conductivity
Journal title
Materials Research Bulletin
Serial Year
2000
Journal title
Materials Research Bulletin
Record number
2095004
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