Title of article
Dielectric properties of PbZrxTi1−xO3/PbZrO3 multilayer thin films
Author/Authors
Bae، نويسنده , , Se-Hwan and Jeon، نويسنده , , Kie-Beom and Jin، نويسنده , , Byung-Moon، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
1931
To page
1937
Abstract
Multilayered thin films of Perovskite structure were fabricated by the sol-gel method. The effects of various stacking and annealing sequences of PbZrO3/Pb(Zr,Ti)O3 (PZ/PZT) multilayered thin films that were related to the structural and dielectric properties were investigated. The samples of PZ/annealing/PZT/annealing, PZT/annealing/PZ/annealing films have PZ and PZT structures together. But PZ/PZT/annealing, PZT/PZ/annealing films have mixed phases of PZ and PZT. PZ-based multilayered thin films have more antiferroelectric properties than that of PZT-based films. The results of X-ray, dielectric constants as a function of temperature, photographs of scanning electron microscope (SEM), and D-E hysteresis loop measurement were explained together.
Keywords
D. Crystal structure , C. X-ray diffraction , A. Thin films , B. sol-gel chemistry
Journal title
Materials Research Bulletin
Serial Year
2001
Journal title
Materials Research Bulletin
Record number
2095443
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