Title of article :
Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals
Author/Authors :
Augustine، نويسنده , , Saji and Mathai، نويسنده , , Elizabeth، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
11
From page :
2251
To page :
2261
Abstract :
Bismuth Selenide single crystals have been grown by the vertical normal freezing technique. Confirmation of the compound formation and the lattice parameters are calculated from the X-ray diffractogram. SEM studies show the parallel cleavage lines in Te-doped samples. Triangular etch pits are obtained on the (111) planes of Bi2Se3. Microindentation studies are carried out on the same plane to understand the mechanical behavior. Annealing and quenching effects of microhardness are evaluated.
Keywords :
A. Semiconductor , B. Crystal growth , D. Mechanical properties , D. Defects
Journal title :
Materials Research Bulletin
Serial Year :
2001
Journal title :
Materials Research Bulletin
Record number :
2095503
Link To Document :
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