Title of article
Microwave dielectric properties and microstructures of CuO- and ZnO-doped LaAlO3 ceramics
Author/Authors
Huang، نويسنده , , Cheng-Liang and Lin، نويسنده , , Ruei-Jsung and Chen، نويسنده , , Hui-Liang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
9
From page
449
To page
457
Abstract
The microwave dielectric properties and the microstructures of 0.25 wt.% CuO-doped LaAlO3 ceramics with ZnO additions have been investigated. The sintered LaAlO3 ceramics are characterized by X-ray diffraction spectra and scanning electron microscopy (SEM). Tremendous reduction in sintering temperature can be achieved with the addition of sintering aids CuO and ZnO. The ceramic samples show that dielectric constants (εr) of 22−24 and Q×f values of 33,000−57,000 (at 9.7 GHz) can be obtained at low sintering temperatures 1340−1460°C. The temperature coefficient of resonant frequency varies from −24 to −48 ppm/°C. At the level of 0.25 wt.% CuO and 1 wt.% ZnO additions, LaAlO3 ceramics possesses a dielectric constant (εr) of 23.4, a Q×f value of 57,000 (at 9.7 GHz) and a τf value of −38 ppm/°C at 1400°C for 2 h.
Keywords
A. Ceramics , A. Oxides , C. X-ray diffraction , D. Dielectric properties
Journal title
Materials Research Bulletin
Serial Year
2002
Journal title
Materials Research Bulletin
Record number
2095674
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