Title of article :
Electron microscopy studies of microstructures in β-Ga2O3 single crystals
Author/Authors :
V??llora، نويسنده , , Encarnaci?n G. and Murakami، نويسنده , , Yasukazu and Sugawara، نويسنده , , Takasi and Atou، نويسنده , , Toshiyuki and Kikuchi، نويسنده , , Masae and Shindo، نويسنده , , Daisuke and Fukuda، نويسنده , , Tsuguo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Microstructures of as-grown and annealed β-Ga2O3 single crystals were studied by electron microscopy. Energy filtered electron diffraction patterns exhibited weak diffuse scattering at 1/2 and 1/4 positions between the fundamental reflections along the q204̄ vector. Dark-field images observed with the 1/2 diffuse scattering showed a characteristic domain-like structure, where the size of each domain was less than 5 nm. The diffused scattering was somewhat weakened by annealing the specimen. The observations indicate a non-homogeneous structural modulation, which is considered to be related to the distribution of oxygen vacancies.
Keywords :
A. Semiconductors , D. Defects , D. Microstructure , C. Electron microscopy , C. Electron diffraction
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin