Title of article :
Specific features of the optical absorption edge anisotropy in In4(P2S6)3 layered crystals
Author/Authors :
Kranjcec، نويسنده , , M and Studenyak، نويسنده , , I.P. and Kovacs، نويسنده , , Gy.S and Mitrovcij، نويسنده , , V.V and Gurzan، نويسنده , , M.I and Voroshilov، نويسنده , , Yu.V، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
9
From page :
2499
To page :
2507
Abstract :
The optical absorption edge of In4(P2S6)3 layered crystals is studied in the temperature range 77–355 K. In the spectral range of direct optical transitions, the absorption edge is of Urbach shape. Electron–phonon interaction result in the smearing of energy bands and, consequently, in appearing of Urbach absorption tails. The temperature variation of the optical pseudogap Eg∗ and the absorption edge energy width w are well described in the Einstein model. Strong anisotropy of the absorption edge spectral position and shape, as well as of electron–phonon interaction, is revealed.
Keywords :
A. Semiconductors , D. Defects , B. Crystal growth , D. Optical properties
Journal title :
Materials Research Bulletin
Serial Year :
2002
Journal title :
Materials Research Bulletin
Record number :
2096056
Link To Document :
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