Title of article :
Phase transitions in quasi-one-dimensional chalcogenides of BaNbxS3 and BaTaxSe3
Author/Authors :
Ohtani، نويسنده , , T and Sawada، نويسنده , , H and Chikamori، نويسنده , , M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
9
From page :
561
To page :
569
Abstract :
BaNbS3 phase was found to be stable in the composition range between x=0.85 and 0.97 for BaNbxS3. The conduction nature was varied from semiconductive to metallic with increasing Nb content. Semiconductor-to-metal (S–M) transition was observed at ∼170 and ∼250 K in BaNb0.95S3 and BaNb0.97S3, respectively. BaTaSe3 phase was stable in the range between x=0.90 and 0.95 for BaTaxSe3. BaTaxSe3 with x=0.90 and 0.95 showed a semiconductor-to-semiconductor transition at ∼140 K, which is characterized by a large jump of the resistivity from ∼106 to ∼1012 Ω cm. Seebeck measurements showed electron conduction in both BaNbxS3 and BaTaxSe3.
Keywords :
D. semiconductivity , A. Chalcogenides , C. X-ray diffraction , D. Electrical properties , D. Phase transitions
Journal title :
Materials Research Bulletin
Serial Year :
2004
Journal title :
Materials Research Bulletin
Record number :
2096658
Link To Document :
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