Title of article :
Schottky diodes and field-effect transistors based on conjugated thiophenes
Author/Authors :
Torsi، نويسنده , , L. and Malitesta، نويسنده , , C. and Sabbatini، نويسنده , , L. and Zambonin، نويسنده , , P.G. and Dodabalapur، نويسنده , , A. and Katz، نويسنده , , H.E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
4
From page :
233
To page :
236
Abstract :
In this paper we present a study of organic devices such as Schottky diodes and field-effect transistors based on thiophene oligomers/polymers. These organic semiconductors can be prepared in the form of a thin layer on a number of substrates, such as glass and flexible plastic. This makes these devices particularly interesting because of the potential advantages they possess in terms of flexibility, low weight, and low cost. The effects produced by rapid thermal annealing on α-sexithiophene (α-6T) thin film transistors (TFTs) are shown to be very important both for the improvement of the on/off ratio of the devices and as a means to shed some light on the understanding of the transport mechanisms in these devices. The electrochemical investigation of the polybithiophene/TiO2 heterojunction clearly shows the rectifying character of the device.
Keywords :
Conjugated thiophenes , Field-effect transistors , Schottky diodes
Journal title :
Materials Science and Engineering C
Serial Year :
1998
Journal title :
Materials Science and Engineering C
Record number :
2097024
Link To Document :
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