Title of article
dc conduction properties of TlSbSe2 crystals
Author/Authors
Kalkan، نويسنده , , N. and Yildirim Erbil، نويسنده , , S. and Deger، نويسنده , , D. and Ulutas، نويسنده , , K. and Celebi، نويسنده , , Y.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
936
To page
941
Abstract
TlSbSe2 samples used for electrical measurements were cleaved from larger crystals grown by using the Bridgman–Stockbarger method. Electrical properties of TlSbSe2 have been carried out as a function of temperature (203–258 K) at different dc electric fields. The dc studies revealed the non-ohmic type of conduction (log I versus log V plot). The field lowering coefficient β is evaluated from log I versus E1/2 plot. It is found that the dominant conduction mechanism in these samples is Poole–Frenkel type. The activation energies are also calculated at different voltages. It is seen that the activation energy decreases with increase of applied voltage.
Keywords
A. Semiconductors , A. Chalcogénides , B. Crystal growth , D. Electrical properties
Journal title
Materials Research Bulletin
Serial Year
2005
Journal title
Materials Research Bulletin
Record number
2097140
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