Title of article :
dc conduction properties of TlSbSe2 crystals
Author/Authors :
Kalkan، نويسنده , , N. and Yildirim Erbil، نويسنده , , S. and Deger، نويسنده , , D. and Ulutas، نويسنده , , K. and Celebi، نويسنده , , Y.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
936
To page :
941
Abstract :
TlSbSe2 samples used for electrical measurements were cleaved from larger crystals grown by using the Bridgman–Stockbarger method. Electrical properties of TlSbSe2 have been carried out as a function of temperature (203–258 K) at different dc electric fields. The dc studies revealed the non-ohmic type of conduction (log I versus log V plot). The field lowering coefficient β is evaluated from log I versus E1/2 plot. It is found that the dominant conduction mechanism in these samples is Poole–Frenkel type. The activation energies are also calculated at different voltages. It is seen that the activation energy decreases with increase of applied voltage.
Keywords :
A. Semiconductors , A. Chalcogénides , B. Crystal growth , D. Electrical properties
Journal title :
Materials Research Bulletin
Serial Year :
2005
Journal title :
Materials Research Bulletin
Record number :
2097140
Link To Document :
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