Title of article :
Influence of oxygen pressure on Nd:LuVO4 films grown by pulsed laser deposition
Author/Authors :
Li، نويسنده , , Hongxia and Wang، نويسنده , , Jiyang and Zhang، نويسنده , , Huaijin and Yu، نويسنده , , Guangwei and Wang، نويسنده , , Xiaoxia and Fang، نويسنده , , Liang and Shen، نويسنده , , Mingrong and Ning، نويسنده , , Zhaoyuan and Xu، نويسنده , , Hua and Li، نويسنده , , Shiling and Wang، نويسنده , , Xuelin and Wang، نويسنده , , Keming، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
1915
To page :
1921
Abstract :
High quality Nd-doped lutecium vanadate thin films on silica glass substrates were fabricated successfully by using a pulsed laser deposition technique. The properties of the samples were characterized by using X-ray diffraction, Rutherford backscattering, atomic force microscopy (AFM), and prism-coupling measurements. The RBS shows that the ratio of Lu/V in the film is 0.991, which is in good agreement with the target composition. X-ray diffraction results show that the degree of crystal orientation along (2 0 0) increases with increasing oxygen pressure up to 20 Pa. The refractive indices of the films determined with dark-mode prism coupling measurements are slight, smaller than that of the bulk crystal. An optimum 20 Pa oxygen pressure, at which the oxygen was leaked into the chamber as the reactive ambient, was determined.
Keywords :
C. Atomic force microscopy , C. X-ray diffraction , B. Laser deposition , A. Thin films
Journal title :
Materials Research Bulletin
Serial Year :
2005
Journal title :
Materials Research Bulletin
Record number :
2097357
Link To Document :
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