The use of dithio- and diselenocarbamates as precursors to nanoscale materials

The effectiveness of dithio- and diselenocarbamates of several metals as precursors for a range of nanoscale semiconducting materials has been demonstrated. Tailoring the precursor alkyl groups, can lead to: self-capping quantum dots, size selection (growth time and temperature) and clean decomposition. Here we report the different outcomes achieved when using the dithio- and diselenocarbamates, [E2CNMenHex] analogue as opposed to the [E2CNMenOctadecyl] compounds. studies using [Cd(Se2CNMenHex)2] showed that there is initially linear growth in the average diameter of the nanoparticles in trioctylphosphine oxide (TOPO at 250 °C). However, for precursor such as [Bi(S2CNMenOctadecyl)3], a radically different approach can be taken. These long chain dithiocarbamates can be used to synthesise self-capped quantum dots, via a simple thermolysis reaction.