Title of article :
Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics
Author/Authors :
Lim، نويسنده , , Jong Bong and Kim، نويسنده , , Dong-Hyun and Nahm، نويسنده , , Sahn and Paik، نويسنده , , Jong-Hoo and Lee، نويسنده , , Hwack-Joo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
7
From page :
1199
To page :
1205
Abstract :
B2O3 added Ba(Mg1/3Nb2/3)O3 (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba2B2O5 second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B2O3 inhibiting the reaction between B2O3 and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (ɛr) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg1/3Nb2/3)O3 + 2.0 mol% B2O3 + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Qxf = 21 500 GHz, ɛr = 31 and temperature coefficient of resonance frequency (τf) = 21.3 ppm/°C.
Keywords :
A. Ceramics , A. Electronic materials , C. Electron microscopy , D. Microstructure , D. Dielectric properties
Journal title :
Materials Research Bulletin
Serial Year :
2006
Journal title :
Materials Research Bulletin
Record number :
2097701
Link To Document :
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