Title of article
Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics
Author/Authors
Lim، نويسنده , , Jong Bong and Kim، نويسنده , , Dong-Hyun and Nahm، نويسنده , , Sahn and Paik، نويسنده , , Jong-Hoo and Lee، نويسنده , , Hwack-Joo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
1199
To page
1205
Abstract
B2O3 added Ba(Mg1/3Nb2/3)O3 (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba2B2O5 second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B2O3 inhibiting the reaction between B2O3 and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (ɛr) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg1/3Nb2/3)O3 + 2.0 mol% B2O3 + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Qxf = 21 500 GHz, ɛr = 31 and temperature coefficient of resonance frequency (τf) = 21.3 ppm/°C.
Keywords
A. Ceramics , A. Electronic materials , C. Electron microscopy , D. Microstructure , D. Dielectric properties
Journal title
Materials Research Bulletin
Serial Year
2006
Journal title
Materials Research Bulletin
Record number
2097701
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