Title of article :
Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching
Author/Authors :
Sabataityt?، نويسنده , , J and ?imkien?، نويسنده , , I and Bendorius، نويسنده , , R.-A and Grigoras، نويسنده , , K and Jasutis، نويسنده , , V and Pa?ebutas، نويسنده , , V and Tvardauskas، نويسنده , , H and Naud?ius، نويسنده , , K، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM and optical methods. The morphology, chemical composition and photoluminescence of porous layers were investigated. It was shown that porous layer consists of Ga2O3, As2O3, As2O5 and GaAs submicron grains. Photoluminescence spectra of investigated porous layers consist of “infrared” and “green” spectral structures. The observed short wavelength photoluminescence (PL) at 590–778 nm of the porous layer is explained by the quantum size effect in the GaAs nanocrystals.
Keywords :
Photoluminescence , XPS , Porous GaAs , AFM
Journal title :
Materials Science and Engineering C
Journal title :
Materials Science and Engineering C
