Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions

The effects of surface preparation and annealing on the electrical parameters of Au/InP and Au/InSb/InP Schottky diodes were investigated; in the latter diode, InSb forms a thin restructuration layer allowing the blockage of In atom migration to the surface. The current–voltage characteristics I–VG of these diodes were measured before and after restructuring. The electrical behavior of the components obtained after creation of Au/InP(100) interfaces before and after annealing of the substrate surface at 300 °C was examined. The analysis of the I–VG curves of Au/InP diodes shows a migration of chemical species towards the interface. The electrical characteristic of this contact is ohmic type when the InP surface is heated at 300 °C, and it is of Schottky type with a poor quality and with a height of the potential barrier equal to 0.44 eV when the InP surface is not heated. On the other hand, the Au/InSb/InP contact presents better electrical quality and structural properties when the InSb/InP surface is heated at 300 °C than when it is not. Thus, in the former case, the contact shows high value, about 0.63 eV, for the height of the potential barrier.