Analysis and simulation of Au/InSb/InP diode C–V characteristic: modeling and experiments

The effects of the energy density distribution and relaxation time of the interface state on electric parameters of Au/InSb/InP(100) Schottky diodes were investigated, in the latter diode, InSb forms a fine restructuration layer allowing to block P atoms migration to surface. To be sure of the disappearance of the In droplets, a high quantity of Sb was evaporated and the excess was eliminated by heating the substrate surface at 300 °C before evaporating Au onto it. rrent–voltage I(VG) and capacitance–voltage C(VG) characteristics are measured as a function of frequency (100 Hz–1 MHz). Typical Ln[I/(1−e−qVG/kT)] versus VG characteristics of Au/heated InSb/InP(100) Schottky diode under forward bias show two linear regions separated by a transition segment. From the first region, the slope and the intercept of this plot on the current axis allow to determine the ideality factor n and the saturation current Is evaluated to 1.79 and 1.64×10−7 A, respectively. an density of interface states estimated from the C(VG) measurements was 1.57 1012 cm−2 eV−1. The interface states were responsible for the non-ideal behavior of the I(VG) characteristics, the capture cross-section σn for the fast slow varies between 2.16×10−11 and 7.13×10−12 cm2 for the relaxation times range 7.9×10−3–2.4×10−2s.