Title of article
Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP
Author/Authors
Ajjel، نويسنده , , R and Za??di، نويسنده , , M.A. and Maaref، نويسنده , , H and Zerra??، نويسنده , , A and Brémond، نويسنده , , G and Ulrici، نويسنده , , W، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
3
From page
303
To page
305
Abstract
The effect of the electric field on both thermal ionization energy and optical threshold energy have been studied using deep level transient spectroscopy (DLTS) and electrical deep level optical spectroscopy (Electrical DLOS) techniques in Cr-doped GaP. The measurements were focused on the Cr3+/ 4+ donor level. It is found that the ionization energy Ei decreases with the electrical field F as in the case of the Poole–Frenkel model. It is found that there is a variation of the optical threshold with the electrical field.
Keywords
Electric field , Optical threshold , Thermal ionization energy
Journal title
Materials Science and Engineering C
Serial Year
2002
Journal title
Materials Science and Engineering C
Record number
2097927
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