• Title of article

    Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP

  • Author/Authors

    Ajjel، نويسنده , , R and Za??di، نويسنده , , M.A. and Maaref، نويسنده , , H and Zerra??، نويسنده , , A and Brémond، نويسنده , , G and Ulrici، نويسنده , , W، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    3
  • From page
    303
  • To page
    305
  • Abstract
    The effect of the electric field on both thermal ionization energy and optical threshold energy have been studied using deep level transient spectroscopy (DLTS) and electrical deep level optical spectroscopy (Electrical DLOS) techniques in Cr-doped GaP. The measurements were focused on the Cr3+/ 4+ donor level. It is found that the ionization energy Ei decreases with the electrical field F as in the case of the Poole–Frenkel model. It is found that there is a variation of the optical threshold with the electrical field.
  • Keywords
    Electric field , Optical threshold , Thermal ionization energy
  • Journal title
    Materials Science and Engineering C
  • Serial Year
    2002
  • Journal title
    Materials Science and Engineering C
  • Record number

    2097927