Author/Authors :
Giovine، نويسنده , , E. and Notargiacomo، نويسنده , , A. and di Gaspare، نويسنده , , L. and Evangelisti، نويسنده , , F. and Palange، نويسنده , , Néstor E. and Leoni، نويسنده , , R. and Castellano، نويسنده , , G. and Torrioli، نويسنده , , G. and Foglietti، نويسنده , , V.، نويسنده ,
Abstract :
Source-drain characteristics of narrow wires, fabricated from high mobility SiGe two-dimensional electron gases, have been investigated at different temperatures and gate biases. The experimental behavior, although reminiscent of Coulomb blockade effects, is instead well accounted for by assuming that the wires are insulating, due to charge depletion, and that the current is due to field-induced tunneling.
Keywords :
SiGe , Wires , Mesoscopic devices , Tunneling
