Title of article
Evidence for amplified interband spontaneous emission in Si-based trans-column quantum dots
Author/Authors
Fukatsu، نويسنده , , S. and Jo، نويسنده , , M. M. I. Ishida، نويسنده , , K. and Yasuhara، نويسنده , , N. and Kawamoto، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
683
To page
686
Abstract
Si-based trans-column semiconductor quantum dots (TCQDs) are created as a new class of Si-based self-assembling nanostructures in an attempt to realize an efficient Si-based light emitter with light amplifying characteristics. A high value of quantum efficiency has been obtained for EL at low temperature, and amplified spontaneous emission of interband radiative recombination has been observed under visible, pulsed laser excitation for GaSb TCQDs embedded in Si.
Keywords
Compound Semiconductor , Amplified spontaneous emission , LED , SI , Quantum dots
Journal title
Materials Science and Engineering C
Serial Year
2003
Journal title
Materials Science and Engineering C
Record number
2098069
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