Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs

We present first-principles calculations of NiMnSb/GaAs(001) junction within the framework of density functional theory (DFT) by using the plane wave pseudopotential method. After optimization of the atomic positions, we have investigated the main electronic and magnetic properties. We extract the band alignments for the majority and the minority spin channels. We found that the half-metallicity, which characterizes the NiMnSb in its bulk and epitaxial phase, is lost at the junction.