Author/Authors :
S?imkien?، نويسنده , , A. and Sabataityt?، نويسنده , , J. and Karpus، نويسنده , , V. and R?za، نويسنده , , A. and Babonas، نويسنده , , G.-J. and C?echavic?ius، نويسنده , , B. and Suchodolskis، نويسنده , , A.، نويسنده ,
Abstract :
Porous multi-layered structures on GaAs:Cr (001) were formed by anodic etching in HF acid based electrolyte. The top layer with a thickness of 0.5–1.5 μm consists mainly of As- and Ga-oxides. As–O crystallites oriented along [110]-axes were observed. Below the top layer, a porous layer of 2–10 μm thickness is formed with micro-pores of up to 2 μm in diameter. The structure and chemical composition of porous GaAs:Cr was studied by SEM, AFM and photoemission microspectroscopy. The porous GaAs:Cr samples were characterized by spectroscopic ellipsometry and modulation spectroscopy techniques. The optical response of the complex sample was analysed in terms of the pseudodielectric function.
