Author/Authors :
Chauvin، نويسنده , , N. and Salem، نويسنده , , B. and Bru-Chevallier، نويسنده , , C. and Benyattou، نويسنده , , T. and Guillot، نويسنده , , G. and Bremond، نويسنده , , G. and Monat، نويسنده , , C. and Rojo-Romeo، نويسنده , , P. and Gendry، نويسنده , , M.، نويسنده ,
Abstract :
Micro-photoluminescence spectroscopy (μ-PL) as a function of excitation power density and temperature, is used to study single self-organized InAs/InP quantum sticks (QSs) suitable for optoelectronic applications around 1.55 μm. The micro-photoluminescence experiments performed on sub-micron mesas at low temperature and low excitation power show several peaks associated to the exciton, biexciton and excited states of single QS, but which present large linewidths in the 0.8–2.5 meV range. The experiments performed through sub-micron apertures on the same bare sample show peaks with narrower linewidths close to 300 μeV. This difference in the linewidth value is thought to be due to a coulomb charge effect induced by the non-intentional doping of the InP barrier layers.
