Title of article :
Microstructural evolution and dielectric properties of Cu-deficient and Cu-excess CaCu3Ti4O12 ceramics
Author/Authors :
Kim، نويسنده , , Kangmin and Lee، نويسنده , , Jong-Heun and Lee، نويسنده , , Kyung-Min and Kim، نويسنده , , Doh-Yeon and Riu، نويسنده , , Doh-Hyung and Lee، نويسنده , , Sung Bo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
8
From page :
284
To page :
291
Abstract :
The microstructural evolution and dielectric properties of CaCu3−xTi4O12−x (3 − x = 2.8–3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.
Keywords :
A. Oxides , A. Electronic materials , B. Dielectric properties
Journal title :
Materials Research Bulletin
Serial Year :
2008
Journal title :
Materials Research Bulletin
Record number :
2098625
Link To Document :
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