Author/Authors :
W. Ouerghui، نويسنده , , W. and Melliti، نويسنده , , A. and Maaref، نويسنده , , M.A. and Martinez-Pastor، نويسنده , , J. and Gomis، نويسنده , , J. and Granados، نويسنده , , D. and Garcia، نويسنده , , J.M.، نويسنده ,
Abstract :
We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy.
