Analysis of the shape of spectral dependence of absorption coefficient and stationary photoconductivity spectral response in nanocrystalline bismuth(III) sulfide thin films

Some aspects regarding the optical and photoelectrical properties of bismuth(III) sulfide nanocrystals deposited in thin film form were studied. The influence of electrostatic interaction between photogenerated charge carriers on the shape of the spectral dependence of absorption coefficient for as-deposited and thermally treated nanocrystalline Bi2S3 thin films was investigated. The experimentally obtained spectral dependencies of the optical absorption coefficient were analyzed using the models of Elliott and Toyozawa. It was shown that the sub-band gap optical absorption of the studied films is of exponential type. A modified Urbach rule function was employed to calculate the relevant parameters which determine the value of critical energy at which a transition between the two main absorption regimes occurs in studied semiconductor. Experimentally obtained changes of Urbach energies (i.e. tailing parameters) upon thermal treatment of the films were explained in terms of the differences in the degree of structural disorder of the as-deposited and annealed films according to the model of Cody. The experimental optical absorption data were also used to model the photoconductivity spectral response of thermally annealed films using various approaches.