Title of article
Photoelectrical properties of layered GaS single crystals and related structures
Author/Authors
Caraman، نويسنده , , M. and Chiricenco، نويسنده , , V. and Leontie، نويسنده , , L. and Rusu، نويسنده , , I.I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
7
From page
3195
To page
3201
Abstract
The photoconductivity of pure and Cu-doped layered gallium monosulfide (GaS) single crystals, and of Ni–GaS(Cu)–In and GaS(Cu)–ZnO structures, is investigated. The activation energies of surface states were found as 0.10 eV, 0.40 eV and 17 meV, ∼400 meV for GaS and GaS(Cu), respectively. Cu acceptor levels are localized at 0.44 eV and 0.52 eV above the valence band of GaS. ZnO–GaS(Cu) heterojunctions show remarkable photosensitivity in the wavelength range of 250–700 nm.
Keywords
A. Layered compounds , A. Semiconductors , B. Crystal growth , D. Electrical properties
Journal title
Materials Research Bulletin
Serial Year
2008
Journal title
Materials Research Bulletin
Record number
2099113
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