Title of article
Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs
Author/Authors
S.Bouzgarrou، نويسنده , , S. and Sghaier، نويسنده , , Na. and Ben Salem، نويسنده , , M.M. and Souifi، نويسنده , , A. and Kalboussi، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
676
To page
679
Abstract
The aim of this work is to study the origin of parasitic effects observed on the output characteristics of InAlAs/InGaAs/InP HEMTs with various buffer layers. Ids − Vds measurements as a function of the temperature have first been performed. Several anomalies were observed such as kink and hysteresis effects. C-DLTS measurements have also been performed. From the obtained results, we have established a strong correlation between parasitic effects observed on the output characteristics and deep levels located near the buffer layer interface.
Keywords
CDLTS , HEMT , Kink effect , Hysteresis effect
Journal title
Materials Science and Engineering C
Serial Year
2008
Journal title
Materials Science and Engineering C
Record number
2099387
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