Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon

We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method with single- and double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternating-current electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties.