Title of article
Photoluminescence study of the nitrogen content effect on GaAs/GaAs1 − xNx/GaAs/AlGaAs: (Si) quantum well
Author/Authors
Hamdouni، نويسنده , , A. and Bousbih، نويسنده , , F. and Ben bouzid، نويسنده , , S. and Aloulou، نويسنده , , S. and Harmand، نويسنده , , J.C. and Chtourou، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
816
To page
819
Abstract
We study the effect of nitrogen content in modulation-doped GaAs/GaAs1 − xNx/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs1 − xNx/GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model.
Keywords
Photoluminescence spectroscopy , GaAsN , Doping III–V semiconductor , Activation energy
Journal title
Materials Science and Engineering C
Serial Year
2008
Journal title
Materials Science and Engineering C
Record number
2099458
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