Title of article
Direct diffusion bonding of Ti3SiC2 and Ti3AlC2
Author/Authors
Yin، نويسنده , , Xiaohui and Li، نويسنده , , Meishuan and Xu، نويسنده , , Jingjun and Zhang، نويسنده , , Jie and Zhou، نويسنده , , Yanchun، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
1379
To page
1384
Abstract
Two typical layered ternary compounds, Ti3SiC2 and Ti3AlC2, were joined directly by solid-state diffusion bonding method. By various bonding tests at 1100–1300 °C for 30–120 min under 10–30 MPa, and characterizing the microstructure and diffusion reactive phases of the joints by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), transmission electron microscopy (TEM) and X-ray diffraction (XRD), the optimal condition for direct joining of Ti3SiC2 and Ti3AlC2 was obtained. Strong joints of Ti3SiC2/Ti3AlC2 can be achieved via diffusion bonding, which is attributed to remarkable interdiffusion of Si and Al at the joint interface. The shear strength of the Ti3SiC2/Ti3AlC2 joints was determined.
Keywords
A. Carbids , A. Layered compounds , D. Diffusion , D. Microstructure
Journal title
Materials Research Bulletin
Serial Year
2009
Journal title
Materials Research Bulletin
Record number
2099594
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