Title of article :
Low temperature growth of single crystalline germanium nanowires
Author/Authors :
Pei، نويسنده , , L.Z. and Zhao، نويسنده , , H.S. and Tan، نويسنده , , W. and Yu، نويسنده , , H.Y. and Chen، نويسنده , , Y.W. and Wang، نويسنده , , J.F. and Fan، نويسنده , , Tohren C.G. and Chen، نويسنده , , J. and Zhang، نويسنده , , Qian-Feng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
6
From page :
153
To page :
158
Abstract :
Ge nanowires have been prepared at a low temperature by a simple hydrothermal deposition process using Ge and GeO2 powders as the starting materials. These as-prepared Ge nanowires are single crystalline with the diameter ranging from 150 nm to 600 nm and length of several dozens of micrometers. The photoluminescence spectrum under excitation at 330 nm shows a strong blue light emission at 441 nm. The results of the pressure and GeO2 content dependences on the formation and growth of Ge nanowires show that the hydrothermal pressure and GeO2 content play an essential role on the formation and growth of Ge nanowires under hydrothermal deposition conditions. The growth of Ge nanowires is proposed as a solid state growth mechanism.
Keywords :
C. Electron microscopy , D. Optical properties , A. Nanostructures , B. Crystal growth
Journal title :
Materials Research Bulletin
Serial Year :
2010
Journal title :
Materials Research Bulletin
Record number :
2099918
Link To Document :
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