Title of article
Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells
Author/Authors
Han، نويسنده , , Junfeng and Liao، نويسنده , , Cheng and Jiang، نويسنده , , Tao and Fu، نويسنده , , Ganhua and Krishnakumar، نويسنده , , V. and Spanheimer، نويسنده , , C. and Haindl، نويسنده , , G. and Zhao، نويسنده , , Kui and Klein، نويسنده , , A. and Jaegermann، نويسنده , , W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
194
To page
198
Abstract
CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon–hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon–hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.
Keywords
A. Semiconductors , A. Thin films , D. Surface properties , C. Photoelectron spectroscopy , B. Chemical synthesis
Journal title
Materials Research Bulletin
Serial Year
2011
Journal title
Materials Research Bulletin
Record number
2100632
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