Title of article
Structure and dielectric performance of K-doped (Pb0.5Ba0.5)ZrO3 thin films
Author/Authors
Hao، نويسنده , , Xihong and Zhai، نويسنده , , Jiwei and Yue، نويسنده , , Zhenxing and Zhou، نويسنده , , Jing and Song، نويسنده , , Xiwen and Yang، نويسنده , , Jichun and An، نويسنده , , Shengli، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
420
To page
423
Abstract
In the present investigation (Pb0.5Ba0.5)ZrO3 (PBZ) thin films doped by K (KPBZ) from 0 to 5 mol% were successfully deposited on Pt-buffered silicon substrates by a sol–gel method. The K content dependence of microstructure and electrical properties of KPBZ thin films were studied in detail. It was found that, although all the films displayed a pure perovskite structure without obvious difference, the surface roughness of KPBZ films was decreased with increasing K content. Dielectric measurements showed that the figure of merit (FOM) values of KPBZ thin films were greatly increased by K-doping, and at the same time that the temperature-dependent stability was also improved. Thus, K doping is a promising way to optimize the overall electrical properties of PBZ thin films for potential application in tunable devices.
Keywords
B. Sol–gel chemistry , A. Thin films , D. Electrical properties
Journal title
Materials Research Bulletin
Serial Year
2011
Journal title
Materials Research Bulletin
Record number
2100710
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