Author/Authors :
Keshavarzi، نويسنده , , Ahmad Reza and Mirkhani، نويسنده , , Valiollah and Moghadam، نويسنده , , Majid and Tangestaninejad، نويسنده , , Shahram and Mohammadpoor-Baltork، نويسنده , , Iraj and Fallah، نويسنده , , Hamid Reza and Dastjerdi، نويسنده , , Mohammad Javad Vahid and Modayemzadeh، نويسنده , , Hamed Reza، نويسنده ,
Abstract :
In this work, the preparation of In2O3–ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In2O3–ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 °C.
Keywords :
A. Nanostructure , A. Thin films , B. vapor deposition , C. X-ray diffraction , D. Optical properties
