Single crystal growth and structure refinements of CsMxTe2−xO6 (M = Al, Ga, Ge, In) pyrochlores

Single crystals of CsMxTe2−xO6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.